Semiconductor base material trace impurity elements in high purity indium carbon is one of the factors affecting the quality of semiconductor devices. Therefore, the determination of trace carbon in high purity indium has become a production on the analysis of the subject need to be solved.

xiang ying analysis technology co., LTD adopts GC7990 gas chromatography is flow in pure oxygen combustion metal indium sample, make into carbon dioxide, the carbon in the sample and then by oxygen flow into the low temperature cold trap, carbon dioxide was set up. After heating stripping, desorption, pure hydrogen as carrier gas, flows through the column, in the role of nickel convert agent, in the 420 ℃ when carbon dioxide is converted into methane, as well as the possible existence of carbon monoxide with hydrogen flow through thermal conductivity cell detector, gas chromatography determination, calculated according to the chromatographic peak area of carbon content in the sample. Sample quantity is 1 g, method detection limit of about 2 x 10 ~ 4%.

               半导体基础材料高纯铟中微量杂质元素碳的存在是影响半导体器件质量的因素之一。因此,高纯铟中微量碳的测定已成为生产上需要解决的分析课题。

              滕州市翔鹰分析技术有限公司采用GC7990气相色谱法是在纯氧气流中燃烧金属铟试样,使试样中的碳转化为二氧化碳,然后被氧气流载入低温冷阱,二氧化碳被捕集起来。再经过升温脱附、解吸,以纯氢气为载气,流经转化柱,在镍转化剂作用下,于420℃时二氧化碳以及可能存在的一氧化碳转化为甲烷,随氢气流一起经过热导池检测器,进行气相色谱测定,根据色谱峰面积计算出试样中碳的含量。取样量为1克时,方法的检出限约2×10~4%。