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生产厂家厂商性质
北京市所在地
聚焦离子束 电子束装置NB5000 Features |
(*1):Optional accessory
(*2):Hitachi patent
Low Cs FIB optics: patent pending, Micro-sampling: JP2774884/US5270552, Section-view function: patent pending, SEM column and detector design: JP3081393/US5387793, Holder compatibility: JP2842083
FIB | Accelerating voltage | 1 - 40kV | |
Beam current | 50 nA or more @ 40kV (CP) | ||
SIM resolution | 5nm @ 40kV (CP) | ||
Magnification | ×60 - ×250,000 | ||
Ion source | Ga Liquid Metal Ion Source | ||
Lens system | Low Cs 2-stage electrostatic lens system | ||
SEM | Accelerating voltage | 0.5 - 30kV | |
SEM resolution | 1.0nm @ 15kV (CP) | ||
Magnification | High Mag mode | ×250 - ×800,000 | |
Low Mag mode | ×70 - ×2,000 | ||
Electron source | ZrO/W Schottky emission | ||
Lens system | 3-stage electromagnetic lens reduction system | ||
Signal selection | SEM | Upper SE, Lower SE, Absorbed current(*1) | |
FIB | Lower SE, Absorbed current(*1) | ||
Eucentric stage | Traverse range | X: 50mm (30mm(*2)), Y: 50mm (30mm(*2)), Z: 22mm | |
T: -1.5 - 58.3°, R: 360° | |||
Sample size | Maximum diameter | Φ50mm (Φ30mm(*2)) | |
Deposition | Material | Tungsten/Carbon (changeable) | |
Micro-sampling | Probe exchange | Load lock type | |
Additional function | Touch sensing, Absorbed current imaging(*1) |
CP:Beam Cross Point
(*1):Optional accessory
(*2):When side entry stage is ordered