品牌
生产厂家厂商性质
北京市所在地
在市场硅原材料持续紧张的背景下,薄膜太阳电池已成为光伏市场发展的新趋势和新热点。与传统的单晶、多晶硅电池的制备工艺不同,制备大面积的薄膜太阳能电池成为可能。
项 目 | 指标和说明 |
光源 | 150W氙灯光纤输出,光学稳定度≦0.8%,可工作在斩波模式, |
测试光斑尺寸 | 3mm~10mm |
单色仪 | 三光栅DSP扫描单色仪 |
波长范围 | 300nm~2000nm |
波长准确度 | a) ±0.3nm(1200g/mm,300nm) |
b) ±0.6nm(600g/mm,500nm) | |
c) ±0.8nm(300g/mm,1250nm) | |
扫描间隔 | 小可至0.1nm |
输出波长带宽 | <5 nm |
多级光谱滤除装置 | 根据波长自动切换,消除多级光谱的影响 |
光调制频率 | 4 - 400 Hz |
标准探测器 | 标配标准硅探测器,InGaAs探测器,含校正报告 |
偏置光源 | 150W Xenon Lamp 光纤输出 |
数据采集装置灵敏度 | 直流模式:100nA;交流模式:2nV |
测量重复精度 | 对太阳光谱曲线积分重复性在±1%以内 |
测量速度 | 单次光谱响应扫描<1min,IPCE完整测试<5min (步长5nm) |
X Y 自动工作台 | 300x300mm 或 500x500mm |
单波长 QE Mapping | 速度:20 Point/Second @ 0.5 mm Step |
SCS10-X150-F300 | 150W Xenon arc lamp for probe source, optical stability ≦0.8%, Adjust mechanism: It can easy remove chopper from probe light |
a) ± 0.3nm;1200g/mm, blaze 300nm (1st grating) | |
b) ± 0.6nm;600g/mm, blaze 500nm (2nd grating) | |
c) ± 0.8nm;300g/mm, blaze 1250nm (3rd grating) | |
6 Position Filter Wheel(200-2000nm) | |
DC mode(Data Acquisition System with Pre Amplifier ) | |
AC mode( Lock-In Amplifier ) | |
Chopper | |
Short current preamplifier | |
Calibrated Si Detector | |
Calibrated InGaAs Detector | |
150W Xenon Bias Light Source with fiber output, White bias light source, optical stability ≦0.8%, with 1 inch Filter Wheel | |
XY Stage for QE Uniformity Scanning, 300mm x300mm | |
SCS10-X150-F500 | XY Stage for QE Uniformity Scanning, 500mm x500mm |
SCS10-T150-F300 | 150W Tungsten-Halogen Light Source instead of Xenon 150W Light Source. XY Stage for QE Uniformity Scanning, 500mm x500mm |
SCS10-T150-F500 | 150W Tungsten-Halogen Light Source instead of Xenon 150W Light Source. XY Stage for QE Uniformity Scanning, 500mm x500mm |