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ES660-P1 ESD静电和闩锁测试系统

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详细信息

ES660-P1 ESD静电和闩锁测试系统

1. Introduction

The ES660 series ESD and LU Test system is a state-of-the-art, multi-pin automated testing equipment designed to meet the rigorous demands of modern semiconductor testing. This versatile device is engineered to seamlessly support the Human Body Model (HBM), Machine Model (MM), and Latch-Up testing, offering a comprehensive solution for assessing the reliability and robustness of integrated circuits (ICs) and electronic components.

With the capability to support up to 1024 pins, the ES660-P1 is ideal for testing complex ICs and electronic components with a multitude of connections. Its high pin count capacity ensures that one can evaluate large-scale devices with precision and efficiency, reducing testing time and enhancing productivity.

For higher pin count, model ES660-P2 (up to 2048 pins) is on the development roadmap.

2. Features

  • Compatibility with Multiple Testing Methods & Standards

  • Highly Flexible Bias and Pin Count Configuration Capability

  • Automated Testing Efficiency

  • Advanced Control and Monitoring

  • Leakage & DC Sweep

  • Data Analysis

3. Applications

  • Semiconductor device ESD testing

  • HBM module meets ANSI/ESDA/JEDEC JS-001, MIL-STD-883E, AEC Q100-002

  • MM module meets ANSI/ESDA SP5.2

  • Latch-up meets JEDEC JESD78

  • Transient Latch-up pending for ANSI/ESD SP5.4.1

4. Specifications

ES660-P1 Base Unit

Parameters ES660-P1 Unit Comments
Touch Screen 5 inch  
Dimensions 480 X 497.5 X 265 mm  
Weight 28 kg Full installation
ESD and LU Waveform Optional Passive voltage and current probes    
Supported Oscilloscope Majority models from Keysight, Tektronix, LeCroy, Rigol,   Customizable
Supported SMU Majority models from Keysight, Tektronix, LeCroy, Rigol,   Customizable
Supported PSU Majority models from Keysight, Tektronix, LeCroy, Rigol.   Customizable

HBM Human Body Model Option

(ANSI/ESDA/JEDEC JS-001)

Parameters ES660-P1-HBM8 ES660-P1-HBM10 Unit Comments
Output voltage ±10 ~ 8000 ±10 ~ 10000 V  
Discharge RC Value C: 100 pF ± 10%, R: 1.5kΩ ± 1%    
Short Load Peak Current Ips 0.67 ± 10 % per kV A  
Short Load Rise Time trs 2 < trs < 10 ns  
Short Load Decay Time tds 130 < tds < 170 ns  
Short Load Ringing trs < 15% of Ips    
500  Load Peak Current Ipr Ipr/Ips ≥ 63%    
500  Load Rise Time trr 5 < trr < 25 ns  
Max Pulse Rate /Pulse Module 10 P/S  

MM Machine Model Option

(ANSI/ESD SP5.2)

Parameters ES660-P1-MM2 ES660-P1-MM4 Unit Comments
Output Voltage ±10 ~ 2000 ±10 ~ 4000 V  
Discharge RC Value C: 200 pF, R: 0 Ω    
Short Load Peak Current Ip1 1.75±10% per 100V A  
Short Load Ip2 67% ~ 90% of Ip1 A  
Short Load Pulse Period tpm 66 < tpm < 90 ns  
500 Ω Load Peak Current Ipr 0.85 – 1.2 A @400V condition per standard
500 Ω Load I100 0.23 – 0.4 A @400V condition per standard

LU Latch-Up Option

(JEDEC JESD78F.01)

Parameters ES660-P1-LU Comments
Preconditioning Vectors ≥ 20 MHz, 256K Depth External Setup
V/I 4-wire Kelvin Measurements Y  
DUT V/I Bus Supplies 3+1, 5+1, 7+1 Additional DC Sources Expansion Available
LU Waveform Capture Y  
Relay Matrix Max V DC (V) 200  
SSR Matrix Max V DC (V) 100  
Max I DC (A) Per Pin 2  
Max I DC (A) Per DC Channel 15  
Default LU Source Vmax (V) >= 150 Limited to 1.2A
Default LU Source Imax (A)  >= 10 Limited to 6 V

TLU Transient Latch-Up Option

(ANSI/ESD SP5.4.1)

[Specifications pending finalization]
Scheduled Hardware-support for Latch-Up Transient Pulse Source:
ES622 (TLP/ VF-TLP), EOS-500 (EOS), LVS-500 (LVS), MM

5. Ordering Information

Line Part # or Option # Description
Base Unit Options
1.1 ES660-P1-BU Relay Based HBM/MM/LU ATE System Base unit
1.2 ES660-P1-HBM8 Human Body Model capability up to 8 kV
1.3 ES660-P1-HBM10 Human Body Model capability up to 10 kV (Obsoleted)
1.4 ES660-P1-MM2 Machine Model capability up to 2 kV
1.5 ES660-P1-MM4 Machine Model capability up to 4 kV (Obsoleted)
1.6 ES660-P1-LU Latch-up capability (Software)
1.7 ES660-P1-TLU Transient Latch-up capability (Software – TLP. EOS)
1.8 ES660-TFM Temperature Forcing Module
Relay Card with Bias Options
2.1 ES660-P1-R64B4 Expansion Relay Card for additional 64 Pin, 3+1 Bias
2.2 ES660-P1-R64B6 Expansion Relay Card for additional 64 Pin, 5+1 Bias
2.3 ES660-P1-R64B8 Expansion Relay Card for additional 64 Pin, 7+1 Bias
DC & Leakage & LU Pulse Source Options
3.1 ES660-PSMU2 Leakage\DC\LU Source: Dual Channels Pulsed SMU (210V/1.5A)
3.2 ES660-SMU1 Leakage\DC Source: Single Channel SMU (200V/1A)
3.3 ES660-PSU1 DC Source: Flex Channels PSU (32V/3A X 2 Ch + 6V/5A X 1 Ch, or 70V/3A X 1 Ch, or 32V/6A X 1 Ch + 6V/5A X 1 Ch)
3.4 ES660-PSU2 DC Source: 3-Channels PSU (60V/3A X 2 Ch, 5V/3A X 1 Ch, or 125V/3A X 1 Ch)
3.5 ES660-PSU3 DC Source: High Current PSU (20V/20A X 1 Ch)
3.6 ES660-PSU4 DC Source: High Current PSU (30V/25A X 1 Ch)
3.7 ES660-PSU5 DC Source: 3-Channels PSU (30V/6A X 2 Ch, 5V/3A X 1 Ch, or 60V/6A X 1 Ch)
3.8 ES660-PSU-MC1 Multi-Channels PSU: Main Frame, with OSC and logs
3.9 ES660-PSUC1 Multi-Channels PSU: Module 50V, 5A, 50W
3.10 ES660-PSUC2 Multi-Channels PSU: Module 50V, 10A, 100W
3.11 ES660-PSUC3 Multi-Channels PSU: Module 60V, 5A, 300W
3.12 ES660-PSUC4 Multi-Channels PSU: Module 100V, 1A, 100W
3.13 ES660-PSUC5 Multi-Channels PSU: Module 100V, 3A, 300W
3.14 ES660-PSUC6 Multi-Channels PSU: Module 150V, 2A, 300W
Test Socket Options
4.1 ES660-P1-DS512 DUT Socket PCB 512 Pin
4.2 ES660-P1-DS1024 DUT Socket PCB 1024 Pin
4.3 ES660-P1-DSC1 DUT Socket PCB Customized Pin Count
Oscilloscope Options
5.1 MISC-OSC1 Digital Oscilloscope (1 GHz, 5 GS/s, 4 Ch)
5.2 CT-T03-1p0

Broadband Current Probe, 1V/A, 2kHz – 2GHz

 

ES660-P1 ESD静电和闩锁测试系统

 

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