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ES660-P1 ESD静电和闩锁测试系统
中级会员第2年
代理商湖南格雷柏电子科技有限公司成立于2016年,主要代理销售国内外产品,致力于表面科学、电子电力、环境力学、化学分析、可靠性分析等领域检测仪器仪表、设备和配件综合服务供应商。
EMC电磁兼容和可靠性分析仪器、仪表、设备综合服务供应商,
芯片级、板级、系统级ESD静电抗扰和EMI电磁干扰测试方案定制商,
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欢迎联系、感谢垂询!
The ES660 series ESD and LU Test system is a state-of-the-art, multi-pin automated testing equipment designed to meet the rigorous demands of modern semiconductor testing. This versatile device is engineered to seamlessly support the Human Body Model (HBM), Machine Model (MM), and Latch-Up testing, offering a comprehensive solution for assessing the reliability and robustness of integrated circuits (ICs) and electronic components.
With the capability to support up to 1024 pins, the ES660-P1 is ideal for testing complex ICs and electronic components with a multitude of connections. Its high pin count capacity ensures that one can evaluate large-scale devices with precision and efficiency, reducing testing time and enhancing productivity.
For higher pin count, model ES660-P2 (up to 2048 pins) is on the development roadmap.
Compatibility with Multiple Testing Methods & Standards
Highly Flexible Bias and Pin Count Configuration Capability
Automated Testing Efficiency
Advanced Control and Monitoring
Leakage & DC Sweep
Data Analysis
Semiconductor device ESD testing
HBM module meets ANSI/ESDA/JEDEC JS-001, MIL-STD-883E, AEC Q100-002
MM module meets ANSI/ESDA SP5.2
Latch-up meets JEDEC JESD78
Transient Latch-up pending for ANSI/ESD SP5.4.1
Parameters | ES660-P1 | Unit | Comments |
Touch Screen | 5 | inch | |
Dimensions | 480 X 497.5 X 265 | mm | |
Weight | 28 | kg | Full installation |
ESD and LU Waveform | Optional Passive voltage and current probes | ||
Supported Oscilloscope | Majority models from Keysight, Tektronix, LeCroy, Rigol, | Customizable | |
Supported SMU | Majority models from Keysight, Tektronix, LeCroy, Rigol, | Customizable | |
Supported PSU | Majority models from Keysight, Tektronix, LeCroy, Rigol. | Customizable |
Parameters | ES660-P1-HBM8 | ES660-P1-HBM10 | Unit | Comments |
Output voltage | ±10 ~ 8000 | ±10 ~ 10000 | V | |
Discharge RC Value | C: 100 pF ± 10%, R: 1.5kΩ ± 1% | |||
Short Load Peak Current Ips | 0.67 ± 10 % per kV | A | ||
Short Load Rise Time trs | 2 < trs < 10 | ns | ||
Short Load Decay Time tds | 130 < tds < 170 | ns | ||
Short Load Ringing trs | < 15% of Ips | |||
500 Ω Load Peak Current Ipr | Ipr/Ips ≥ 63% | |||
500 Ω Load Rise Time trr | 5 < trr < 25 | ns | ||
Max Pulse Rate /Pulse Module | 10 | P/S |
Parameters | ES660-P1-MM2 | ES660-P1-MM4 | Unit | Comments |
Output Voltage | ±10 ~ 2000 | ±10 ~ 4000 | V | |
Discharge RC Value | C: 200 pF, R: 0 Ω | |||
Short Load Peak Current Ip1 | 1.75±10% per 100V | A | ||
Short Load Ip2 | 67% ~ 90% of Ip1 | A | ||
Short Load Pulse Period tpm | 66 < tpm < 90 | ns | ||
500 Ω Load Peak Current Ipr | 0.85 – 1.2 | A | @400V condition per standard | |
500 Ω Load I100 | 0.23 – 0.4 | A | @400V condition per standard |
Parameters | ES660-P1-LU | Comments |
Preconditioning Vectors | ≥ 20 MHz, 256K Depth | External Setup |
V/I 4-wire Kelvin Measurements | Y | |
DUT V/I Bus Supplies | 3+1, 5+1, 7+1 | Additional DC Sources Expansion Available |
LU Waveform Capture | Y | |
Relay Matrix Max V DC (V) | 200 | |
SSR Matrix Max V DC (V) | 100 | |
Max I DC (A) Per Pin | 2 | |
Max I DC (A) Per DC Channel | 15 | |
Default LU Source Vmax (V) | >= 150 | Limited to 1.2A |
Default LU Source Imax (A) | >= 10 | Limited to 6 V |
[Specifications pending finalization]
Scheduled Hardware-support for Latch-Up Transient Pulse Source:
ES622 (TLP/ VF-TLP), EOS-500 (EOS), LVS-500 (LVS), MM
Line | Part # or Option # | Description |
Base Unit Options | ||
1.1 | ES660-P1-BU | Relay Based HBM/MM/LU ATE System Base unit |
1.2 | ES660-P1-HBM8 | Human Body Model capability up to 8 kV |
1.3 | ES660-P1-HBM10 | Human Body Model capability up to 10 kV (Obsoleted) |
1.4 | ES660-P1-MM2 | Machine Model capability up to 2 kV |
1.5 | ES660-P1-MM4 | Machine Model capability up to 4 kV (Obsoleted) |
1.6 | ES660-P1-LU | Latch-up capability (Software) |
1.7 | ES660-P1-TLU | Transient Latch-up capability (Software – TLP. EOS) |
1.8 | ES660-TFM | Temperature Forcing Module |
Relay Card with Bias Options | ||
2.1 | ES660-P1-R64B4 | Expansion Relay Card for additional 64 Pin, 3+1 Bias |
2.2 | ES660-P1-R64B6 | Expansion Relay Card for additional 64 Pin, 5+1 Bias |
2.3 | ES660-P1-R64B8 | Expansion Relay Card for additional 64 Pin, 7+1 Bias |
DC & Leakage & LU Pulse Source Options | ||
3.1 | ES660-PSMU2 | Leakage\DC\LU Source: Dual Channels Pulsed SMU (210V/1.5A) |
3.2 | ES660-SMU1 | Leakage\DC Source: Single Channel SMU (200V/1A) |
3.3 | ES660-PSU1 | DC Source: Flex Channels PSU (32V/3A X 2 Ch + 6V/5A X 1 Ch, or 70V/3A X 1 Ch, or 32V/6A X 1 Ch + 6V/5A X 1 Ch) |
3.4 | ES660-PSU2 | DC Source: 3-Channels PSU (60V/3A X 2 Ch, 5V/3A X 1 Ch, or 125V/3A X 1 Ch) |
3.5 | ES660-PSU3 | DC Source: High Current PSU (20V/20A X 1 Ch) |
3.6 | ES660-PSU4 | DC Source: High Current PSU (30V/25A X 1 Ch) |
3.7 | ES660-PSU5 | DC Source: 3-Channels PSU (30V/6A X 2 Ch, 5V/3A X 1 Ch, or 60V/6A X 1 Ch) |
3.8 | ES660-PSU-MC1 | Multi-Channels PSU: Main Frame, with OSC and logs |
3.9 | ES660-PSUC1 | Multi-Channels PSU: Module 50V, 5A, 50W |
3.10 | ES660-PSUC2 | Multi-Channels PSU: Module 50V, 10A, 100W |
3.11 | ES660-PSUC3 | Multi-Channels PSU: Module 60V, 5A, 300W |
3.12 | ES660-PSUC4 | Multi-Channels PSU: Module 100V, 1A, 100W |
3.13 | ES660-PSUC5 | Multi-Channels PSU: Module 100V, 3A, 300W |
3.14 | ES660-PSUC6 | Multi-Channels PSU: Module 150V, 2A, 300W |
Test Socket Options | ||
4.1 | ES660-P1-DS512 | DUT Socket PCB 512 Pin |
4.2 | ES660-P1-DS1024 | DUT Socket PCB 1024 Pin |
4.3 | ES660-P1-DSC1 | DUT Socket PCB Customized Pin Count |
Oscilloscope Options | ||
5.1 | MISC-OSC1 | Digital Oscilloscope (1 GHz, 5 GS/s, 4 Ch) |
5.2 | CT-T03-1p0 | Broadband Current Probe, 1V/A, 2kHz – 2GHz
ES660-P1 ESD静电和闩锁测试系统 |