HgCdTe(MCT)多通道检测模块

HgCdTe(MCT)多通道检测模块

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2024-10-09 15:33:36
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产地类别:国产;价格区间:面议;应用领域:环保,化工;
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产地类别
国产
价格区间
面议
应用领域
环保,化工
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深圳市唯锐科技有限公司

深圳市唯锐科技有限公司

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产品简介

HgCdTe(MCT)多通道检测模块提供针对不同波长的四象限和多元线阵探测器模块,基于HgCdTe材料,集成了跨阻抗、直流耦合四通道前置放大器、TE制冷和风扇。

详细介绍

HgCdTe(MCT)多通道检测模块

VIGO Photonics 提供针对不同波长的四象限和多元线阵探测器模块,基于HgCdTe材料,集成了跨阻抗、直流耦合四通道前置放大器、TE制冷和风扇。四象限模块适合用于测量光束的移动或作为对准系统的反馈;多元线阵探测器多用于非接触式的温度测量,常用于铁路运输。除标准5μm和10.6μm模块,根据不同应场景,可接受定制。


四象限模块

1、QM-5,四象限,制冷模块,光敏面4×(0.2×0.2)

Specification (Ta = 20°C)
ParameterTypical value
Optical characteristics
Cut-on wavelength λcut-on (10%), µm3.5±0.5
Peak wavelength λpeak, µm4.5±0.5
Optimum wavelength λopt, µm5
Cut-off wavelength λcut-off (10%), µm6.0±0.5
Detectivity D*(λpeak), cm·Hz1/2/W≥7.0×109
Detectivity D*(λopt), cm·Hz1/2/W≥6.8×109
Output noise density vn(100 kHz), nV/Hz1/2≤500
Electrical parameters
Voltage responsivity Rv(λpeak, RL = 1 MΩ*)), V/W≥1.7×105
Voltage responsivity Rv(λopt, RL = 1 MΩ*)), V/W≥1.6×105
Low cut-off frequency flo, HzDC
High cut-off frequency fhi, Hz≥1M
Output impedance Rout, Ω50
Output voltage swing Vout (RL = 1 MΩ*)), V0 – 4
Output voltage offset Voff, mVmax ±20
Power supply voltage Vsup, VDC7.5
Power consumption, Wmax 6
Other information
Active elements materialepitaxial HgCdTe heterostructure
Active areas A, mm×mm4×(0.2×0.2)
Distance between active elements, mm0.02
WindowpSiAR
Acceptance angle Φ~70°
Ambient operating temperature Ta, °C10 to 30
Signal output sockets4×MCX
Power supply socketDC 2.1/5.5
Mounting holeM4
Fanyes

2、QM-10.6,四象限,非制冷模块,光敏面4×(1×1)

Specification (Ta = 20°C)
ParameterTypical value
Optical characteristics
Cut-on wavelength λcut-on (10%), µm3.0±1.0
Peak wavelength λpeak, µm8.0±2.0
Optimum wavelength λopt, µm10.6
Cut-off wavelength λcut-off (10%), µm12.0±1.0
Detectivity D*(λpeak), cm·Hz1/2/W≥1.0×107
Detectivity D*(λopt), cm·Hz1/2/W≥4.5×106
Output noise density vn(100 kHz) µV/Hz1/2≤4.5
Electrical parameters
Voltage responsivity Rv(λpeak, RL = 1 MΩ*)), V/W≥2.2×102
Voltage responsivity Rv(λopt, RL = 1 MΩ*)), V/W≥1.1×102
Low cut-off frequency flo, HzDC
High cut-off frequency fhi, Hz≥1M
Output impedance Rout, Ω50
Output voltage swing Vout(RL = 1 MΩ*)), V0 – 4
Output voltage offset Voff, mVmax ±20
Power supply voltage Vsup, VDC7.5
Power consumption, Wmax 6
Other information
Active elements materialepitaxial HgCdTe heterostructure
Active areas A, mm×mm4×(1×1)
Distance between active elements, mm0.15±0.1
Windownone
Acceptance angle Φ~70°
Ambient operating temperature Ta, °C10 to 30
Signal output sockets4×MCX
Power supply socketDC 2.1/5.5
Mounting holeM4
Fanyes


HgCdTe(MCT)多通道检测模块多元线阵模块

1、4EM-5,1×4线阵,制冷模块,光敏面4×(0.2×0.2)

Specification (Ta = 20°C)
ParameterTypical value
Optical characteristics
Cut-on wavelength λcut-on (10%), µm3.5±0.5
Peak wavelength λpeak, µm4.5±0.5
Optimum wavelength λopt, µm5
Cut-off wavelength λcut-off (10%), µm6.0±0.5
Detectivity D*(λpeak), cm·Hz1/2/W≥7.0×109
Detectivity D*(λopt), cm·Hz1/2/W≥6.8×109
Output noise density vn(100 kHz), nV/Hz1/2≤500
Electrical parameters
Voltage responsivity Rv(λpeak, RL = 1 MΩ*)), V/W≥1.7×105
Voltage responsivity Rv(λopt, RL = 1 MΩ*)), V/W≥1.6×105
Low cut-off frequency flo, HzDC
High cut-off frequency fhi, Hz≥1M
Output impedance Rout, Ω50
Output voltage swing Vout (RL = 1 MΩ*)), V0 – 4
Output voltage offset Voff, mVmax ±20
Power supply voltage Vsup, VDC7.5
Power consumption, Wmax 6
Other information
Active elements materialepitaxial HgCdTe heterostructure
Active areas A, mm×mm4×(0.2×0.2)
Distance between active elements, mm0.05
WindowpSiAR
Acceptance angle Φ~70°
Ambient operating temperature Ta, °C10 to 30
Signal output sockets4×MCX
Power supply socketDC 2.1/5.5
Mounting holeM4
Fanyes

2、4EM-5,1×32线阵,制冷模块,光敏面4×(0.2×0.2)

Specification (Ta = 20°C, Vb = 0 mV)Detection module type
Parameter
32EM-5-0132EM-5-02
Optical characteristics
Cut-on wavelength λcut-on (10%), µm≤2.03.7±0.2
Peak wavelength λpeak, µm4.25±0.24.75±0.2
Optimal wavelength λopt, µm55
Cut-off wavelength λcut-off (10%), µm5.6±0.25.8±0.2
Detectivity D*(λpeak), cm·Hz1/2/W≥3.5×109≥2.4×109
Detectivity D*(λopt), cm·Hz1/2/W≥2.2×109≥2.2×109
Electrical parameters
Voltage responsivity Rv(λpeak, RLoad = 1 MΩ), V/W≥3.5×104≥5.0×104
Voltage responsivity Rv(λopt, RLoad = 1 MΩ), V/W≥2.2×104≥4.6×104
Low cut-off frequency flo, HzDCDC
High cut-off frequency fhi, kHz≥400≥650
Output impedance Rout, Ω5050
Output voltage swing Vout (RLoad = 1 MΩ), V-1
(negative output)
-1
(negative output)
Output voltage offset Voff, mVDCmax -200max -200
Power supply voltage Vsup, VDC55
Other information
Active elements materialepitaxial HgCdTe heterostructure
Number of elements1×32 linear array
Active area of single element A, mm×mm0.125×10.1×0.1
Distance between active elements, µm2550
WindowpAl2O3AR
Acceptance angle Φ~70°
Ambient operating temperature Ta, °C10 to 30

应用领域

  • CO2激光(10.6µm)测量

  • 激光功率监控,激光束轮廓和定位

  • 激光校准

  • 光谱学(气体检测,呼吸分析)

  • 慢速和快速非接触式温度测量(铁路运输、工业和实验室过程监控)

  • 光学分拣系统

  • 激光束轮廓和定位

  • 火焰和爆炸检测

  • 国防和安全

  • 燃烧过程控制




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