基于285nm二氧化硅基底的单层氮化硼薄膜
基于285nm二氧化硅基底的单层氮化硼薄膜
基于285nm二氧化硅基底的单层氮化硼薄膜

基于285nm二氧化硅基底的单层氮化硼薄膜

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2024-06-03 13:20:41
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产品简介

Single Layer CVD hexagonal Boron Nitride Film on 285 nm SiO2/Si substrates (p-doped), 1cmx1cm: 8 pack
Properties of BN film
97% coverage with minor holes and organic residues
High Crystalline Quality

详细介绍

Single Layer CVD hexagonal Boron Nitride Film on 285 nm SiO2/Si substrates (p-doped), 1cmx1cm: 8 pack

Properties of BN film

97% coverage with minor holes and organic residues

High Crystalline Quality

The Raman spectrum should peak at ~1369cm-1

Single Layer CVD hexagonal Boron Nitride Film on 285 nm SiO2/Si substrates (p-doped), 1cmx1cm: 8 pack

Properties of BN film

97% coverage with minor holes and organic residues

High Crystalline Quality

The Raman spectrum should peak at ~1369cm-1

Single Layer CVD hexagonal Boron Nitride Film on 285 nm SiO2/Si substrates (p-doped), 1cmx1cm: 8 pack

Properties of BN film

97% coverage with minor holes and organic residues

High Crystalline Quality

The Raman spectrum should peak at ~1369cm-1

 

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